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Press Releases
鐢靛瓙鍏冨櫒浠跺熀纭鐭ヨ瘑锛4锛--鍗婂浣撳櫒浠 [2017-11-07]
DONGYANG E&P Territory [2017-02-22]
Company declaration [2014-10-30]
Silikron Semiconductor Power MOSFET Series-In low profi [2014-10-28]
Silikron released 20A 100V schottky diodes with the IFS [2009-10-31]
Silikron Released 75V N Channel Trench Power MOSFET pro [2009-09-02]
Silikron 30-V P-Channel Trench Power MOSFET with 11 m惟 [2009-09-02]
Silikron 20-V N-Channel Trench Power MOSFET with 22 m惟 [2009-09-02]
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| Part Number | Configuration | Package | peak repetitive reverse voltage(VRRM) | Max Averaged Rectified Current IF | Max peak forward surge current(IFSM) | Forward Voltage Drop(VF)@ IF | Max reverse Current IR@VRRM | ESD | |
| (V) | (A) | (A) | (V) | (A) | |||||
| SSBD1045D | single | TO252 | 45 | 10 | 150 | 0.55 | 10 | 0.1 | |
| Part Number | Configuration | Package | peak repetitive reverse voltage(VRRM) | Max Averaged Rectified Current IF | Max peak forward surge current(IFSM) | Forward Voltage Drop(VF)@ IF | Max reverse Current IR@VRRM | ESD | |
| (V) | (A) | (A) | (V) | (A) | |||||
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