• Silikron 20-V N-Channel Trench Power MOSFET with 22 m惟 Maximum On-Resistance in TSSOP-8 Footprint Area
  •     SuZhou Silikron Semiconductor Co. limited released 20-V N-channel power MOSFET in the TSSOP-8 footprint area, uses advanced trench technology to provide excellent RDS(ON), and low gate charge with a 12V gate rating.  The maximum on-resistance was down to 22mΩ at a 4.5-V gate drive and 26 mΩ at 2.5 V, 10% lower than competitor products . This device is suitable for use in battery protection and load switch applications. Standard Product SSF8205A is Pb-free (meets ROHS)


All Silikron products and materials are RoHS compliant.