新硅能开发650V，1200V SiC功率MOSFET产品，具有高耐压、电流密度大、低损耗、优良的短路能力等特点，进一步降低器件的开关损耗，广泛应用于新能源汽车、充电桩、太阳能逆变器等领域。
| Part Number | Technology | Package | Configuration | V(BR)DSS (V) | ID (A) | VGS (V) | VGS(th) (V) | RDSON (mΩ)max | Automotive | Status | |
| min | max | 20V | |||||||||
|
|
|
|
|
Min1200
|
Min38
|
|
Min2.3
|
Min3.6
|
Min40
|
|
|
| SMI120N32E2 | Planar | TO-247-4L | N | 1200 | 87 | -4/+15 | 2.3 | 3.6 | 40 | N | Developing |
| SMI120N40E2 | Planar | TO-247-4L | N | 1200 | 76 | -4/+15 | 2.3 | 3.6 | 50 | N | Developing |
| SMI120N75E21 | Planar | TO-247-4L | N | 1200 | 38 | -4/+18 | 2.3 | 3.6 | 85 | N | Developing |
| SMI120N75E22 | Planar | TO-247-4L | N | 1200 | 44 | -4/+15 | 2.3 | 3.6 | 90 | N | Developing |
